Insulated Gate Bi-polar Transistors - Capsule Types

As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link) and 4.5kV (2.8kV DC link). The construction of these devices is totally free from wire and solder bonds which all but eliminates the problems of mechanical fatigue associated with conventional modules. Internal stray inductance in both the gate connections and emitter connections is vastly reduced when compared to conventional modules leading to improved ruggedness and short circuit behavior, which is further enhanced by direct cooling of the emitter side of the chip.

These devices are based on a state of the art punch through (PT) process, which yields exceptional values V_CE(sat) and quiet switching behavior despite the high voltage ratings, yet the devices feature a positive temperature coefficient making them suitable for reliable parallel operation. Devices available with or without integral anti-parallel diode – a range of complimentary extra fast recovery diodes optimised for use with these IGBTs are available now with more based on exciting new technologies coming soon, please contact your representative for more information

They exhibit exceptional power cycling performance – typically an order of magnitude better than modules –making them highly suited to applications such as induction heating and mass transits where there are repeated cyclic power demands.They are explosion rated making them a good choice in critical applications such as mining, the petro-chemica industry, and transportation applications.They have a stable short circuit failure mode which, as well as safety benefits, makes them an ideal choice for medium and high voltage applications where series connection is required. Press-pack construction is the obvious choice where series connection is needed and the short circuit failure mode allows for the design in of n+redundancy.

Typical examples include HVDC, Active VAr controllers and medium voltage drives. They are largely backwardly compatible with standard 2.5kV and 4.5kV GTOs in many applications such as AC drives. This makes these parts a simple and economical path to upgrade or refurbish equipment that previously used GTOs, such as locomotives or medium voltage drives.They are suitable for all cooling options including direct liquid immersion. Complementary gate drives, mounting clamps and passive components available.

Figure W41 - 75mm - 1100g

Type

V_CES

I_C

I_CM

V_CE(sat)

IGBT Switching

V_F

Diode Recovery

T_JM

R_thJK

Fig. No.

I_C=I_C

Typical

I_F=I_C

Typical

IGBT

Diode

E_ON

E_OFF

I_rm

t_rr

Q_r

Part No.

µs

µC

°C

K/W

T0160NA45A

4500

160

310

4.7

0.50

0.42

3.6

400

0.96

340

125

0.058

0.095

W40

T0240NA45E

4500

240

400

4.7

0.73

0.88

N/A

125

0.042

N/A

W40

Figure W44 - 85mm - 1200g

T0360NA25A

2500

360

720

3.6

0.75

0.34

2.5

250

0.93

285

125

0.054

0.087

W40

T0500NA25E

2500

500

1000

3.6

0.80

0.50

N/A

125

0.039

N/A

W40

T0600TA45A

4500

600

1000

4.7

1.75

1.50

3.6

1400

0.92

650

125

0.016

0.039

W41

T0800TA45E

4500

800

1500

4.7

2.20

1.92

3.6

N/A

125

0.012

N/A

W41

T0900EA45A

4500

900

1500

4.7

2.80

2.60

3.6

1440

1.50

1900

125

0.016

0.029

W44

T1200TA25A

2500

1200

2400

3.6

2.50

1.40

2.5

670

1.50

830

125

0.017

0.029

W41

T1200EA45E

4500

1200

2100

4.7

3.50

4.00

N/A

125

0.012

N/A

W44

T1500TA25E

2500

1500

3000

3.6

3.30

1.70

N/A

125

0.013

N/A

W41

T1800GA45A

4500

1800

3000

4.7

5.6

6.4

3.6

7.8

2.2

3500

125

0.008

0.014

W45

T2400GA45E

4500

2400

4200

4.7

7.2

7.8

N/A

125

0.005

N/A

W45

Dev>TX168NA17A

1700

Products Under Development

W40

Dev>TX167NA17E

1700

W40

Figure W45 - 125mm - 2000g

Dev>TX115TA17A

1700

W41

Dev>TX116TA17E

1700

W41